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HN7G10FE

Part Number	HN7G10FE
Manufacturer	Toshiba Semiconductor
Description	Power Management Switch Applications
Published	Feb 10, 2009
Detailed Description	HN7G10FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G10FE Unit: mm Power Management Switch Applications ...
Datasheet	HN7G10FE PDF File

Overview

HN7G10FE TOSHIBA Multichip Discrete Device www.
DataSheet4U.
com HN7G10FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • • Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 400 50 Unit V V V mA mA 1.
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EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA ...

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HN7G10FE Power Management Switch Applications - Toshiba Semiconductor

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