Silicon Power Transistor - SavantIC
Description
SavantIC Semiconductor
www.
DataSheet4U.
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Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2N6531
Fig.
1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 5 8 15 0.
25 65 150 -65~150 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL R9JC PARAMETER Thermal resistance junction to case VALUE 1.
92 UNIT /W
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N6531
SYMBOL
MAX
UNIT
VCEO(SUS) VCEsat-1 VCEsat-2 VBE-1 VBE-2 ICEV ICEO IEBO hFE-1 hFE-2 VF
Collector-emitter sustaining voltage
IC=0.
2A ; IB=0 IC=3A ;IB=6mA IC=8A; IB=80mA IC=3A ; VCE=3V IC=8A ; VCE=3V VCE=100V; VBE=-1.
5V TC=125 VCE=100V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=8A ; VCE=3V IF=5A
100
V
Collector-emitter saturation voltage
2.
0
V
Collector-emitter saturation voltage
3.
0
V
Base -emitter on voltage
2.
8
V
Base -emitter on voltage
4.
5 0.
5 5.
0 1.
0
V
Collector cut-off current
mA
Collector cut-off current
mA
Emitter cut-off current
5.
0
mA
DC current gain
500
10000
DC current gain
100
5000
Diode forward voltage
4.
0
V
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6531
Fig.
2 Outline dimensions(unindicated tolerance:±0.
10 mm)
3
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