Silicon Power Transistor - SavantIC
Description
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose of switching and linear-amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N6469
Fig.
1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -15 -5 125 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.
4 UNIT /W
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2N6469
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 fT
Collector-emitter sustaining voltage
IC=-0.
2A ;IB=0 IC=-5A; IB=-0.
5A IC=-15A; IB=-3A IC=-15A ; VCE=-4V VCE=-20V; IB=0 VCE=-45V; VBE=-1.
5V TC=150 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-0.
5A ; VCE=-10V
-40
V
Collector-emitter saturation voltage
-1.
3
V
Collector-emitter saturation voltage
-3.
5
V
Base-emitter on voltage
-3.
5
V
Collector cut-off current
1.
0 -0.
2 -5.
0 -5
mA
Collector cut-off current
mA
Emitter cut-off current
mA
DC current gain
20
150
DC current gain
5
Transition frequency
4
MHz
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6469
Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm)
3
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