(2N6467 / 2N6468) Silicon Power Transistor - SavantIC
Description
SavantIC Semiconductor
www.
DataSheet4U.
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Product Specification
Silicon PNP Power Transistors
2N6467 2N6468
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Complement to type 2N6465 2N6466 APPLICATIONS ·For use in audio amplifier applications
PINNING(see Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N6467 VCBO Collector-base voltage 2N6468 2N6467 VCEO Collector-emitter voltage 2N6468 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -5 -4 40 150 -65~150 V A W Open emitter -130 -100 V CONDITIONS VALUE -110 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.
5 UNIT /W
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2N6467 2N6468
SYMBOL
MIN
TYP.
MAX
UNIT
2N6467 VCEO(SUS) Collector-emitter sustaining voltage 2N6468 IC=-50mA ;IB=0
-100 V -120
VCEsat VBE
Collector-emitter saturation voltage
IC=-1.
5A; IB=-0.
15A IC=-1.
5A ; VCE=-4V
-1.
2
V
Base-emitter on voltage
-1.
5
V
2N6467 ICBO Collector cut-off current 2N6468
VCB=-110V; IE=0 -10 VCB=-130V; IE=0 VCE= -100V,IB=0 -100 µA VCE= -120V,IB=0 VEB=-5V; IC=0 IC=-1.
5A ; VCE=-4V IC=-0.
5A ; VCE=-10V 15 -10 µA µA
2N6467 ICEO Collector cut-off current 2N6468
IEBO hFE fT
Emitter cut-off current
DC current gain
150
Transition frequency
5
MHz
2
SavantIC Semiconductor
www.
DataSheet4U.
com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6467 2N6468
Fig.
2 outline dimensions
3
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