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BLF861A

NXP Semiconductors
Part Number BLF861A
Manufacturer NXP Semiconductors
Description UHF power LDMOS transistor
Published Dec 19, 2008
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com M3D392 BLF861A UHF power LDMOS transistor Product specification...
Datasheet PDF File BLF861A PDF File

BLF861A
BLF861A


Overview
DISCRETE SEMICONDUCTORS DATA SHEET www.
DataSheet4U.
com M3D392 BLF861A UHF power LDMOS transistor Product specification Supersedes data of 2000 Aug 04 2001 Feb 09 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch errors • Source on underside eliminates DC isolators; reducing www.
DataSheet4U.
com common mode inductance • Designed for broadband operation (UHF band) • Internal input and output matching for high gain and optimum broadband operation.
1 2 BLF861A PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION APPLICATIONS • Communication transmitter applications in the UHF frequency range.
3 4 MBK777 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap.
The common source is connected to the mounting flange.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source 860 MHz test circuit.
MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 >150 typ.
170 (peak sync) Top view Fig.
1 Simplified outline.
Gp (dB) >13.
5 typ.
14.
5 >14 ηD (%) >50 >40 ∆Gp (dB) ≤1 note 1 Note 1.
Sync compression: input sync ≥ 33%; output sync 27%.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb ≤ 25 °C CONDITIONS − − − − −65 − MIN.
65 ±15 18 318 +150 200 MAX.
V V A W °C °C UNIT 2001 Feb 09 2 Philips Semiconductors Product specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 318 W BLF861A VALUE ...


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