Power MOSFET - Vishay Siliconix
Description
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
www.
vishay.
com
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
S G
GS
GD S
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
-250
VGS = -10 V
3.
0
14
3.
1
6.
8
Single
FEATURES
• Advanced process technology
• Fully avalanche rated
• Surface-mount (IRFR9214, SiHFR9214)
• Straight lead (IRFU9214, SiHFU9214)
• P-channel • Fast switching
Available
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free SiHFR9214-GE3
Lead (Pb)-free
IRFR9214PbF
Note a.
See device orientation
DPAK (TO-252) SiHFR9214TRL-GE3 IRFR9214TRLPbF a
DPAK (TO-252) SiHFR9214TR-GE3 IRFR9214TRPbF a
IPAK (TO-251) SiHFU9214-GE3 IRFU9214PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at -10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junction and storage temperature range S...
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