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IRFU120

Vishay Siliconix
Part Number IRFU120
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...
Datasheet PDF File IRFU120 PDF File

IRFU120
IRFU120


Overview
www.
vishay.
com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 VGS = 10 V Qg (Max.
) (nC) 16 Qgs (nC) Qgd (nC) 4.
4 7.
7 Configuration Single 0.
27 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120, SiHFR120) • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR120-GE3 IRFR120PbF SiHFR120-E3 Note a.
See device orientation.
DPAK (TO-252) SiHFR120TR-GE3a IRFR120TRPbFa SiHFR120T-E3a DPAK (TO-252) SiHFR120TRR-GE3a IRFR120TRRPbFa SiHFR120TR-E3a DPAK (TO-252) SiHFR120TRL-GE3a IRFR120TRLPbFa SiHFR120TL-E3a IPAK (TO-251) SiHFU120-GE3 IRFU120PbF SiHFU120-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperatur...


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