2SK2003-01MR
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage www. DataSheet4U. com VGS=±30V Guarantee Avalanche-proof
FUJI POWER MOSFET
FAP-IIA SERIES
Outline Drawings
TO-220F15
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
2. 54
3. Source
JEDEC EIAJ
SC-67
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 600 4 16 4 ±30 40 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V VGS=0V VGS=±30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V RG=10 Ω ID=4A VGS=10V L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C
Min.
600 2. 5 Tch=25°C Tch=125°C
Typ.
3. 0 10 0. 2 10 2. 0 4 1000 85 20 20 15 45 15 1. 1 400 2
Max.
3. 5 500 1. 0 100 2. 4 1500 130 30 30 25 70 25 1. 65
Units
V V µA mA nA Ω S pF
2
ns A V ns µC
4
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
62. 5...
K2003 PDF File
