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SiHFP340

Vishay Siliconix
Part Number SiHFP340
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRFP340, SiHFP340 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SiHFP340 PDF File

SiHFP340
SiHFP340


Overview
IRFP340, SiHFP340 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 62 10 30 Single D FEATURES • Dynamic dV/dt Rating 400 0.
55 • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
TO-247 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP340PbF SiHFP340-E3 IRFP340 SiHFP340 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 400 ± 20 11 6.
9 44 1.
2 480 11 15 150 4.
0 - 55 to + 150 300d 10 1.
1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 6.
9 mH, RG = 25 Ω, IAS = 11 A (see fig.
12).
c.
ISD ≤ 11 A, dI/dt ≤ 120 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
...


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