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SiHFP26N60L

Vishay Siliconix
Part Number SiHFP26N60L
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description www.vishay.com IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (...
Datasheet PDF File SiHFP26N60L PDF File

SiHFP26N60L
SiHFP26N60L


Overview
www.
vishay.
com IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 180 61 85 Single 0.
21 D TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications Available • Lower gate charge results in simpler drive Available requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS • Zero voltage switching (SMPS) • Telecom and server power supplies • Uninterruptible power supplies • Motor control applications TO-247AC IRFP26N60LPbF SiHFP26N60L-E3 IRFP26N60L SiHFP26N60L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 1.
7 mH, Rg = 25 Ω, IAS = 26 A, dV/dt = 21 V/ns (see fig.
12).
c.
ISD ≤ 26 A, dI/dt ≤ 480 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
LIMIT 600 ...


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