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SiHF9Z14S

Vishay Siliconix
Part Number SiHF9Z14S
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (...
Datasheet PDF File SiHF9Z14S PDF File

SiHF9Z14S
SiHF9Z14S


Overview
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) - 60 VGS = - 10 V 12 Qgs (nC) 3.
8 Qgd (nC) 5.
1 Configuration Single 0.
50 I2PAK (TO-262) D2PAK (TO-263) S G SD D G S G D P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z14S, SiHF9Z14S) • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) • 175 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
The through-hole version (IRF9Z14L, SiHF9Z14L) is available for low-profile applications.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHF9Z14S-GE3 IRF9Z14SPbF SiHF9Z14S-E3 D2PAK (TO-263) SiHF9Z14STRL-GE3a IRF9Z14STRLPbFa SiHF9Z14STL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche En...


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