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AO4438

Alpha & Omega Semiconductors
Part Number AO4438
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 1, 2008
Detailed Description AO4438 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS ...
Datasheet PDF File AO4438 PDF File

AO4438
AO4438

Overview
AO4438 N-Channel Enhancement Mode Field Effect Transistor General Description www.
DataSheet4U.
com provide Features VDS (V) = 60V ID = 8.
2A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.
5V) The AO4438 uses advanced trench technology to excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO4438 is Pb-free (meets ROHS & Sony 259 specifications).
AO4438L is a Green Product ordering option.
AO4438 and AO4438L are electrically identical.
D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 60 ±20 8.
2 6.
6 40 3.
1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4438 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8.
2A Static Drain-Source On-Resistance VGS=4.
5V, ID=7.
6A gFS VSD IS Forward Transconductance VDS=5V, ID=8.
2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 40 16.
3 30 20 24 0.
74 1 3 1920 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 155 116 0.
65 47.
6 VGS=10V, VDS=30V, ID=8.
2A 24.
2 6 14.
4 8.
2 VGS=10V, VDS=30V, RL=3.
6Ω, RGEN=3Ω IF=8.
2A, dI/dt=100A/µs 2 Min 60 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) www.
DataSheet4U.
com Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 ...


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