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AO4435

Alpha & Omega Semiconductors
Part Number AO4435
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Dec 1, 2008
Detailed Description AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS...
Datasheet PDF File AO4435 PDF File

AO4435
AO4435

Overview
AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description www.
DataSheet4U.
com provide Features VDS = -30V ID = -10A (VGS = -10V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) The AO4435 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications).
SOIC-8 Top View S S S G D D D D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±25 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG -10 -8 -80 3.
1 2.
0 -55 to 150 -8 -6 1.
7 1.
1 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady State Steady State RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4435 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.
DataSheet4U.
com Conditions ID = -250µA, VGS = 0V VDS = -30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±25V VDS = VGS ID = -250µA VGS = -10V, VDS = -5V VGS = -10V, ID = -10A TJ=125°C VGS = -5V, ID = -5A VDS = -5V, ID = -10A Min -30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance -1 -5 ±100 -1.
7 -80 15 22 27 22 -0.
74 -1 -3.
5 1130 1400 18 27 36 -2.
3 -3 µA nA V A mΩ S V A pF pF pF RDS(ON) gFS VSD IS Diode Forward Voltage IS = -1A,VGS = 0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Cr...


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