DatasheetsPDF.com

AO4430L

Alpha & Omega Semiconductors
Part Number AO4430L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel FET
Published Dec 1, 2008
Detailed Description Rev 1: June 2004 AO4430, AO4430L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description...
Datasheet PDF File AO4430L PDF File

AO4430L
AO4430L


Overview
Rev 1: June 2004 AO4430, AO4430L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description www.
DataSheet4U.
com provide Features VDS (V) = 30V ID = 18A RDS(ON) < 5.
5mΩ (VGS = 10V) RDS(ON) < 7.
5mΩ (VGS = 4.
5V) The AO4430 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance.
This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.
AO4430L (Green Product) is offered in a lead free package.
D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 18 15 80 3 2.
1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4430, AO4430L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=18A Static Drain-Source On-Resistance VGS=4.
5V, ID=15A gFS VSD IS Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 80 4.
7 6.
5 6.
2 82 0.
7 1 4.
5 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 638 355 0.
45 103 VGS=10V, VDS=15V, ID=18A 48 18 15 12 VGS=10V, VDS=15V, RL=0.
83Ω, RGEN=3Ω IF=18A, dI/dt=100A/µs 8 51.
5 8.
8 33.
5 22 5.
5 8 7.
5 1.
8 Min 30 1 5 100 2.
5 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.
DataSheet4U.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)