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HAT1065R

Renesas Technology
Part Number HAT1065R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1065R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate...
Datasheet PDF File HAT1065R PDF File

HAT1065R
HAT1065R

Overview
HAT1065R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 2 G 1 234 78 DD 4 G S1 MOS1 56 DD S3 MOS2 REJ03G0579-0200 Rev.
2.
00 Apr 04, 2006 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS –200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.
25 –1 Body-drain diode reverse drain current Channel dissipation IDR Pch Note2 Pch Note3 –0.
25 1.
3 2 Channel temperature Tch 150 Storage temperature Ts...


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