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H7P0601DS

Renesas Technology
Part Number H7P0601DS
Manufacturer Renesas Technology
Title Silicon P Channel MOS FET High Speed Power Switching
Description H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 ...
Features • Low on-resistance RDS(on) = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outli...
Published Nov 20, 2008
Datasheet PDF File H7P0601DS PDF File


H7P0601DS
H7P0601DS


Features

• Low on-resistance RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 ...



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