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STP6NC80Z

STMicroelectronics
Part Number STP6NC80Z
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Nov 5, 2008
Detailed Description STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected Power...
Datasheet PDF File STP6NC80Z PDF File

STP6NC80Z
STP6NC80Z

Overview
STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.
5Ω - 5.
4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP6NC80Z/FP www.
DataSheet4U.
com STB6NC80Z/-1 s s VDSS 800V 800V RDS(on) < 1.
8 Ω < 1.
8 Ω ID 5.
4 A 5.
4 A 1 3 s s s TYPICAL RDS(on) = 1.
5 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D²PAK TO-220 3 1 2 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s I²PAK (Tabless TO-220) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (q ) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature .
(*)Pulse Value STP(B)6NC80Z(-1) 800 800 ± 25 5.
4 3.
4 21 125 1 ±50 3 3 -–65 to 150 150 2000 5.
4(*) 3.
4(*) 21(*) 40 0.
32 STP6NC80ZFP Unit V V V A A A W W/°C mA KV V/ns V °C °C (•)Pulse width limited by safe operating area December 2002 (1)ISD ≤5.
4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX width Limited by maximum temperature allowed 1/13 STP6NC80Z/FP/STP6NC80Z-1 THERMAL DATA TO-220 / D²PAK / I²PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature Fo...


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