DatasheetsPDF.com

C5196

Toshiba Semiconductor
Part Number C5196
Manufacturer Toshiba Semiconductor
Description 2SC5196
Published Oct 29, 2008
Detailed Description 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • • Complemen...
Datasheet PDF File C5196 PDF File

C5196
C5196

Overview
2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • • Complementary to 2SA1939 Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute www.
DataSheet4U.
com Maximum Ratings (Tc = 25°C) Characteristics Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 6 0.
6 60 150 −55 to 150 Unit V V V A A W °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-16C1A temperature/current/v...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)