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AP4417GH

Advanced Power Electronics
Part Number AP4417GH
Manufacturer Advanced Power Electronics
Description ENHANCEMENT MODE POWER MOSFET
Published Sep 20, 2008
Detailed Description AP4417GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ ...
Datasheet PDF File AP4417GH PDF File

AP4417GH
AP4417GH

Overview
AP4417GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.
DataSheet4U.
com Switching Characteristic ▼ RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -35V 75mΩ -15A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP4417GJ) is available for low-profile applications.
G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -35 ±20 -15 -9 -40 26 0.
21 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 4.
8 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200411051-1/4 AP4417GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.
-35 -1 - Typ.
-0.
03 9 6 1.
4 3.
5 6 18 17 4 400 95 70 6 Max.
Units 75 110 -3 -1 -25 ±100 10 640 9 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance VGS=-10V, ID=-10A VGS=-4.
5V, ID=-8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS...


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