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SW1N60A

Part Number	SW1N60A
Manufacturer	Fairchild Semiconductor
Description	SSW1N60A
Published	Sep 19, 2008
Detailed Description	Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A ...
Datasheet	SW1N60A PDF File

Overview

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.
DataSheet4U.
com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Low RDS(ON) : 9.
390 Ω (Typ.
) 1 I2-PAK 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Tot...

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