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G4PC30F

International Rectifier
Part Number G4PC30F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 9, 2008
Detailed Description PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimize...
Datasheet PDF File G4PC30F PDF File

G4PC30F
G4PC30F

Overview
PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features www.
DataSheet4U.
com C Fast Speed IGBT • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package VCES = 600V G E VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC ...


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