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2SC6026MFV

Part Number	2SC6026MFV
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Sep 9, 2008
Detailed Description	2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Application...
Datasheet	2SC6026MFV PDF File

Overview

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C) 1.
2 ± 0.
05 0.
8 ± 0.
05 0.
4 0.
4 0.
22 ± 0.
05 1.
2 ± 0.
05 0.
80 ± 0.
05 Unit: mm 0.
32 ± 0.
05 1 1 3 2 0.
13 ± 0.
05 Characteristic Symbol Rating Unit 0.
5 ± 0.
05 Collector-base voltage VCBO 60 V Collector-emitter voltage Emitter-base voltage Collector current Base current VCEO VEBO IC IB 50 V 5 V 150 mA 30 mA VESM ...

Similar Datasheet

2SC6026MFV Silicon NPN Transistor - Toshiba Semiconductor

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