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2SC6026

Toshiba Semiconductor
Part Number 2SC6026
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Sep 9, 2008
Detailed Description 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications • • ...
Datasheet PDF File 2SC6026 PDF File

2SC6026
2SC6026

Overview
2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications • • • • • www.
DataSheet4U.
com Unit: mm 0.
15±0.
05 High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) 0.
6±0.
05 0.
35±0.
05 High hFE Lead (Pb) free : hFE = 120~400 Complementary to 2SA2154 1 3 2 0.
8±0.
05 1.
0±0.
05 0.
1±0.
05 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 ...


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