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2SJ291

Part Number	2SJ291
Manufacturer	Hitachi Semiconductor
Description	Silicon P-Channel MOS FET
Published	Aug 23, 2008
Detailed Description	2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching Features • ...
Datasheet	2SJ291 PDF File

Overview

2SJ291 Silicon P-Channel MOS FET November 1996 www.
DataSheet4U.
com Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.
DataSheet4U.
com Avalanche current Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –20 –80 –20 –20 Unit V V A A A A mJ W °C °C Aval...

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