DatasheetsPDF.com

MRF949T1

Motorola
Part Number MRF949T1
Manufacturer Motorola
Description LOW NOISE TRANSISTORS
Published Aug 22, 2008
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF949T1/D The RF Line NPN Silicon Low Noise Transistor...
Datasheet PDF File MRF949T1 PDF File

MRF949T1
MRF949T1


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF949T1/D The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers.
The MRF949 is well suited for low voltage wireless applications.
This device features a 9 GHz DC current gain–bandwidth product with excellent linearity.
• Low Noise Figure, NFmin = 1.
4 dB (Typ) @ 1 GHz @ 5 mA • High Current Gain–Bandwidth Product, ft = 9 GHz @ 15 mA • Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA www.
DataSheet4U.
com MRF949T1 ICmax = 50 mA LOW NOISE TRANSISTORS • Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA • Fully Ion–Implanted with Gold Metallization and Nitride Passivation • Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel CASE 463–01, STYLE 1 (SC–90) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above TC = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RθJC Value 10 20 1.
5 0.
144 1.
92 50 150 – 55 to +150 520 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W DEVICE MARKINGS MRF949T1 = JL (1) To calculate the junction temperature use TJ = (PD x RθJC) + TC.
The case temperature is measured on collector lead adjacent to the package body.
(2) IC — Continuous (MTBF > 10 years).
RF DEVICE DATA ©MOTOROLA Motorola, Inc.
1998 MRF949T1 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (3) Collector–Emitter Breakdown Voltage (IC = 0.
1 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 0.
1 mA, IE = 0) Emitter Cutoff Current (VEB = 1 V, IC = 0) Collector Cutoff Current (VCB = 10 V, IE = 0) V(BR)CEO V(BR)CBO IEBO ICBO 10 20 — — 12 23 — — — — 0.
1 0.
1 Vdc Vdc µA µA ON CHARACTERISTICS (3) DC Cur...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)