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MRF9411

Motorola
Part Number MRF9411
Manufacturer Motorola
Description High-Frequency Transistors
Published Aug 22, 2008
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Fre...
Datasheet PDF File MRF9411 PDF File

MRF9411
MRF9411


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers.
This series features excellent broadband linearity and is offered in a variety of packages.
• Fully Implanted Base and Emitter Structure • 9 Finger, 1.
25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal www.
DataSheet4U.
comT1 suffix = 3,000 units per reel MMBR941 MRF947 MRF9411 SERIES • Available in tape and reel packaging options: T3 suffix = 10,000 units per reel IC = 50 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR941LT1, T3, MMBR941BLT1 CASE 419–02, STYLE 3 MRF947AT1, MRF947BT1, MRF947T1, T3 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF9411LT1 REV 9 MOTOROLA RF DEVICE DATA © Motorola, Inc.
1997 MMBR941 MRF947 MRF9411 SERIES 2–1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above Tcase = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RθJC MMBR941LT1, T3 10 20 1.
5 0.
25 3.
33 50 150 – 55 to +150 300 MRF9411LT1 10 20 1.
5 0.
25 3.
33 50 150 – 55 to +150 300 MRF947 Series 10 20 1.
5 0.
188 2.
5 50 150 – 55 to +150 400 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W DEVICE MARKING www.
DataSheet4U.
com MMBR941LT1 = 7Y MRF9411LT1 = 10 MMBR941BLT1 = 7N MRF947AT1 = G MRF947T1, T3 = A MRF947BT1 = H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (3) Collector–Emitter Breakdown Voltage (IC = 0.
1 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 0.
1 mA, IE = 0) Emitter Cutoff Current (VEB = 1.
0 V, IC = 0) Collector Cutoff Current (VCB = 10 V, IE = 0) V(BR)CEO All V(BR)CBO All IEBO All ICBO All — — 0.
1 µAdc — — 0.
1 µAdc 20 23 — Vdc 10 12...


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