Power MOSFET - Advanced Power Technology
Description
400V 23A 0.
20Ω
APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
D3PAK
SVFR
• Faster Switching
• Avalanche Energy Rated
D
• Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS
• TO-247 or Surface Mount D3Pak
G
S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
APT4020B_SVFR(G) 400 23 92 ±30 ±40 250 2
-55 to 150 300 23 30 960
UNIT Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
23
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11.
5A)
IDSS
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.
0mA)
2
0.
20 250 1000 ±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com
UNIT Volts Amps Ohms
µA
nA Volts
050-5635 Rev...
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