Power MOSFET - ON Semiconductor
Description
NTP45N06L, NTB45N06L
Power MOSFET 45 Amps, 60 Volts
Logic Level, N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
• Higher Current Rating • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • Pb−Free Packages are Available
Typical Applications
• Power Supplies • Converters • Power Motor Controls • Bridge Circuits
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev.
2
http://onsemi.
com
45 AMPERES, 60 VOLTS RDS(on) = 28 mW
N−Channel D
G
S 4
1 2 3
4
12
TO−220AB CASE 221A
STYLE 5
3 D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain
4 Drain
NTx45N06LG AYWW
NTx 45N06LG AYWW
1 Gate
2 Drain
3 Source
12 3 Gate Drain Source
NTx45N06L = Device Code
x
= B or P
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Publication Order Number: NTP45N06L/D
NTP45N06L, NTB45N06L
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms)
VDSS VDGR
VGS VGS
60
Vdc
60
Vdc
Vdc "15 "20
Drain Current
− Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms)
ID
45
Adc
ID
30
IDM
150
Apk
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)
PD
125
W
0.
83
W/°C
3.
2
W
2.
4
W
Operating and Storage Temperature Range
TJ, Tstg
−55 to +175
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.
0 Vdc, L = 0.
3 mH IL(pk) = 40 A, VDS ...
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