2SC3421 - Toshiba Semiconductor
Description
2SC3421
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
Unit: mm • • • Complementary to 2SA1358 Suitable for driver of 60 to 80 watts audio amplifier High breakdown voltage
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Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 1 100 1.
5 10 150 −55 to 150 Unit V V V A mA W °C °C
JEDEC JEITA
― ―
TOSHIBA 2-8H1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 0.
82 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1
2006-11-09
2SC3421
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency www.
DataSheet4U.
com Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (Note) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 80 ― ― ― ― Typ.
― ― ― ― 0.
30 0.
78 120 15 Max 100 100 ― 240 1.
0 1.
0 ― ― V V MHz pF Unit nA nA V
Note: hFE classification O: 80 to 160, Y: 120 to 240
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