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MRF9030LR1

Part Number	MRF9030LR1
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Aug 7, 2008
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030/D The RF Sub - Mi...
Datasheet	MRF9030LR1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.
5% IMD — - 32.
5 dBc • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel.
R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs www.
DataSheet4U.
com Freescale Semiconductor, Inc.
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CASE 360B - 05, STYLE 1 NI - 360 MRF9030LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF9030LSR1 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9030LR1 MRF9030LSR1 Tstg TJ Characteristic Thermal Resistance, Junction to Case MRF9030LR1 MRF9030LSR1 Symbol RθJC Symbol VDSS VGS PD Value 68 - 0.
5, + 15 92 0.
53 117 0.
67 - 65 to +150 200 Unit Vdc Vdc Watts W/°C Storage Temperature Range Operating Junction Temperature °C °C THERMAL CHARACTERISTICS Max 1.
9 1.
5 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4 MOTOR...

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