Advanced Power MOSFET - AUK
Description
Semiconductor
STK0765P
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• High Voltage: BVDSS=650V(Min.
) • Low Crss : Crss=19pF(Typ.
) • Low gate charge : Qg=49nc(Typ.
) • Low RDS(on) :RDS(on)=1.
2Ω(Max.
) www.
DataSheet4U.
com
Ordering Information
Type NO.
STK0765P Marking STK0765 Package Code TO-220AB-3L
Outline Dimensions
9.
80~10.
20 Φ3.
70 Max.
8.
20~8.
60
unit : mm
4.
35~4.
65 1.
20~1.
40
6.
30~6.
70
9.
05~9.
35
12.
68~13.
48
1.
62 Max.
0.
95~1.
05 1.
49~1.
59 1.
37 Max.
0.
95 Max.
2.
20~2.
60
9.
85~10.
15
2.
54 Typ.
5.
08 Typ.
3.
00°
0.
40~0.
60
2.
35~2.
45
9.
85~10.
15
PIN Connections 1.
Gate 2.
Drain 3.
Source
KSD-T0P003-000
1
STK0765P
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
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*
(Tc=25°C)
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
650 ±30 7 4.
4 28 100 7 420 7 14.
7 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-a)
Typ.
-
Max
1.
25 83.
3
Unit
℃/W
KSD-T0P003-000
2
STK0765P
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance
www.
DataSheet4U.
com Input capacitance
(Tc=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS ④ ④ RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250µA, VGS=0 ID=250µA, VDS= VGS VDS=650V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=3.
5A VDS=10V, ID=5.
0A VGS=0V, VDS=25V f=1MHz
Min.
650 2.
0 3.
9 -
Typ.
6.
4 881 123 19 18 19 72 28 49 8.
4 22
Max.
4.
0 1 ±100 1.
2 1321 184 28 73 13 33
Unit
V V µA nA Ω S pF
Output capacitance Reverse trans...
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