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K1381

Toshiba Semiconductor
Part Number K1381
Manufacturer Toshiba Semiconductor
Description 2SK1381
Published Jul 28, 2008
Detailed Description 2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and D...
Datasheet PDF File K1381 PDF File

K1381
K1381

Overview
2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current www.
DataSheet4U.
com Enhancement−mode : RDS (ON) = 25 mΩ (typ.
) : |Yfs| = 33 S (typ.
) : IDSS = 100 µA (max) (VDS = 100 V) : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 100 100 ±20 50 200 150 150 −55~150 Unit V V V A W °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
...


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