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3DD13001

Part Number	3DD13001
Manufacturer	TRANSYS Electronics
Description	Plastic-Encapsulated Transistors
Published	Jul 21, 2008
Detailed Description	Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 ...
Datasheet	3DD13001 PDF File

Overview

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.
2 W (Tamb=25℃) 1.
BASE 2.
COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 DataSheet4U.
com Collector current ICM: 0.
2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter ...

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