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3DD13001

Part Number	3DD13001
Manufacturer	Jiangsu Changjiang Electronics
Description	TRANSISTOR
Published	Jul 21, 2008
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© ...
Datasheet	3DD13001 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipation PCM : 1.
25 W£¨ Tamb=25¡æ£© Collector current ICM : 0.
2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Ba...

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