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IRL3303LPBF

Part Number	IRL3303LPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Jul 21, 2008
Detailed Description	www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through...
Datasheet	IRL3303LPBF PDF File

Overview

www.
DataSheet4U.
com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D IRL3303LPbF IRL3303SPbF VDSS = 30V RDS(on) = 0.
026Ω PD - 95578 G ID = 38A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for lowprofile applications.
D 2 Pak TO-262 Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
38 27 140 3.
8 68 0.
45 ±16 130 20 6.
8 5.
0 -55 to + 175 300 (1.
6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ.
Max.
2.
2 40 Units °C/W 07/20/04 www.
irf.
com ...

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IRL3303LPBF Power MOSFET - International Rectifier

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