S9014
NPN General Purpose Transistors
TO-92
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1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5. 0 100 0. 4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 0. 1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 50 Vdc, IE=0) Emitter Cutoff Current (VEB= 3. 0V d c, I C=0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 45 50 5. 0 Max 0. 1 0. 1 Unit Vdc Vdc Vdc uAdc uAdc
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S9014
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min
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Max Unit
On Characteristics
DC Current Gain
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HFE VCE(sat)
60
1000
-
Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Base-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Transition Frequency (IC= 10 mAdc, VCE= 5 Vdc, f=30MHz)
-
0. 3
Vdc
VBE(sat)
-
1
Vdc
fT
150
-
MHz
CLASSIFICATION OF hFE Rank
Range
A 60-150
B 100-300
C 200-600
D 400-1000
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S9014
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FIG. 1
FIG. 2
FIG. 3
FIG. 4
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S9014
unit:mm
TO-92 Outline Dimensions
E
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TO-92
H
C
J K
G
Dim A B C D E G H J K L
Min Max 3. 70 3. 30 1. 40 1. 10 0. 55 0. 38 0. 51 0. 36 4. 70 4. 40 3. 43 4. 70 4. 30 1. 270TYP 2. 44 2. 64 14. 10 14. 50
B
L
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D
A
...
S9014 PDF File
