Low Capacitance Diode Array - Pan Jit International
Description
PJUSB208-PJUSB208R
Low Capacitance Diode Array
This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges.
SOT23-6L
SPECIFICATION FEATURES
Maximum Capacitance of 3.
0pF at 0Vdc 1MHz Line-to-Ground Peak Inverse voltage of 40V per diode www.
DataSheet4U.
com Maximum Leakage Current of 1.
0µA @ VR Industry Standard SMT Package SOT23-6L IEC61000-4-2 (Level 4) +/-8kV (Contact) +/-15kV (Air) 100% Tin Matte finish (LEAD-FREE PRODUCT) Two pin 1 orientations available
I/O3
I/O2
1
6
I/O3
REF2
2
5
REF1
I/O1
3
4
I/O4
PJUSB208
1
6
I/O2
APPLICATIONS
REF1
2
5
REF2
USB 2.
0 and Firewire Port Protection
I/O4
3
4
I/O1
LAN/WLAN Access Point terminals Video Signal line protection PJUSB208R
TVS PJSUB208 PJUSB208R
Marking Code 208 316
MAXIMUM RATINGS Tj = 25°C Unless otherwise noted
Rating Repetitive Peak Inverse Voltage Continuous Reverse Voltage Peak Pulse Current (8/20µs Waveform) Average Rectified Forward Current, Per Diode Power Dissipation, Tj = 85°C, IF = 200mA, Per Diode Operating Junction Temperature Range Storage Temperature Range Soldering Temperature, t max = 10 s Symbol V RRM VR I PP I F(AV) PD Tj Tstg TL Value 40 40 24 50 100 -55 to +150 -55 to +150 260 Units V V A mA mW °C °C °C
6/19/2006
Page 1
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panjit.
com
PJUSB208
ELECTRICAL CHARACTERISTICS
Parameter Repetitive Peak Inverse Voltage Breakdown Voltage Forward Voltage (8/20µs Pulse) Reverse Leakage Current
www.
DataSheet4U.
com
Tj = 25°C unless otherwise noted
Symbol V RRM V BR VF IR
Conditions
Min
Typ
Max 40
Units V V
I BR = 10µA I PP = 1A I PP = 10A V R = 40V 0Vdc Bias, f =1 MHz Between I/O pins and REF2 (Ground) 0Vdc Bias, f =1 MHz Between I/O pins
50 2.
0 5.
0 1.
0 3.
0
V V µA pF
Off-State Junction Capacitance
CJ
2.
0
pF
8/20µs Surge Pulse Waveform
110 100 90 80 70 60 50 40 30 20 10 0 0
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