2SK1342 - Hitachi Semiconductor
Description
2SK1342
Silicon N-Channel MOS FET
Application
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High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK1342
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
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Value at TC = 25°C
Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 900 ±30 8 20 8 100 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1342
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 900 ±30 — — 2.
0 — 3.
5 — — — — — — — — — Typ — — — — — 1.
2 5.
5 1730 700 310 25 135 185 130 0.
9 900 Max — — ±10 250 3.
0 1.
6 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.
5 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 I D = 4 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance www.
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Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
3
2SK1342
Power vs.
Temperature Derating 150 Channel Dissipation Pch (W) 50 20 Drain Current ID (A) 10 5 2 1 0.
5 0.
2 0.
1 0...
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