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TSM2320

Taiwan Semiconductor Company
Part Number TSM2320
Manufacturer Taiwan Semiconductor Company
Description 20V N-Channel Enhancement Mode MOSFET
Published Jun 25, 2008
Detailed Description TSM2320 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V...
Datasheet PDF File TSM2320 PDF File

TSM2320
TSM2320

Overview
TSM2320 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1.
Gate 2.
Source 3.
Drain VDS = 20V RDS (on), Vgs @ 4.
5V, Ids @ 3.
0A = 45mΩ RDS (on), Vgs @ 2.
5V, Ids @ 2.
0A = 65mΩ www.
DataSheet4U.
com Features — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No.
TSM2320CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 75 oC o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 20V ±10 3.
6 14 1.
25 0.
8 +150 -55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) N...


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