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APT35GN120L2DQ2

Advanced Power Technology
Part Number APT35GN120L2DQ2
Manufacturer Advanced Power Technology
Description IGBT
Published May 7, 2008
Detailed Description TYPICAL PERFORMANCE CURVES ® APT35GN120L2DQ2 APT35GN120L2DQ2G* APT35GN120L2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb...
Datasheet PDF File APT35GN120L2DQ2 PDF File

APT35GN120L2DQ2
APT35GN120L2DQ2

Overview
TYPICAL PERFORMANCE CURVES ® APT35GN120L2DQ2 APT35GN120L2DQ2G* APT35GN120L2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff.
The Trench Gate design results in superior VCE(on) performance.
Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient.
Built-in gate resistance ensures ultra-reliable operation.
Low gate charge simplifies gate drive design and minimizes losses.
TO-264 Max G C • • • • • 1200V NPT Field Stop E Trench Gate: Low VCE(on) Easy Paralleling 10µs Short ...


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