(TIP120 - TIP122) Si-Epitaxial Planar Darlington Power Transistors - Diotec Semiconductor
Description
TIP120 .
.
.
TIP122
TIP120 .
.
.
TIP122 NPN
Version 2006-10-17
10±0.
2 3 4 3.
8
Type Typ
Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren Max.
power dissipation with cooling Max.
Verlustleistung mit Kühlung Collector current Kollektorstrom Plastic case Kunststoffgehäuse Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen
NPN
65 W 5A TO-220AB 2.
2 g
15.
7
1 2 3
www.
DataSheet4U.
com
13.
2 1.
5 0.
9 2.
54
Dimensions - Maße [mm] 1=B 2/4 = C 3=E
Maximum ratings (TA = 25°C) Collector-Emitter-volt.
– Kollektor-Emitter-Spg.
Collector-Base-voltage – Kollektor-Basis-Spg.
Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25°C TC = 25°C Ptot Ptot IC ICM IB Tj TS B open E open C open VCEO VCBO VEBO 60 V 60 V
3.
4
Grenzwerte (TA = 25°C) TIP120 TIP121 80 V 80 V 5V 2 W 1) 65 W 5A 8A 120 mA -55.
.
.
+150°C -55…+150°C TIP122 100 V 100 V
Characteristics (Tj = 25°C) Min.
DC current gain – Kollektor-Basis-Stromverhältnis )
2
Kennwerte (Tj = 25°C) Typ.
– – Max.
– –
IC = 0.
5 A, VCE = 3 V IC = 3 A, VCE = 3 V Small signal current gain – Kleinsignal-Stromverstärkung IC = 3 A, VCE = 4 V, f = 1 MHz
hFE hFE hfe
1000 1000 4
1 2
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% http://www.
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com/
© Diotec Semiconductor AG
1
TIP120 .
.
.
TIP122 Characteristics (Tj = 25°C) Min.
Collector-Emitter s...
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