HiPerFET Power MOSFETs - IXYS Corporation
Description
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg
www.
DataSheet4U.
com Preliminary data sheet
IXFH 58N20Q IXFT 58N20Q
VDSS ID25
RDS(on)
= 200 V = 58 A = 40 mW
trr £ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 200 200 ± 20 ± 30 58 232 58 30 1.
0 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C g g
TO-268 (D3) (IXFT) Case Style
G S
(TAB)
TO-247 AD
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque TO-247 TO-268
300 6 4
Features
l l l
1.
13/10 Nm/lb.
in.
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min.
Typ.
Max.
200 2.
0 4.
0 ±100 25 1 40 V V nA µA mA mΩ
l l
l
IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification
Advantages
l l l
VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
© 1999 IXYS All rights reserved
98523A (5/99)
IXFH IXFT
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
Typ.
Max.
24 34 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 870 280 20 VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 RG = 1.
5 Ω (External) 40 40 13 98 140 VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 25 45 35 70 0.
42 (TO-247) 0.
25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source
1 ...
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