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IXFH58N20Q

Part Number	IXFH58N20Q
Manufacturer	IXYS Corporation
Description	HiPerFET Power MOSFETs
Published	Apr 23, 2008
Detailed Description	HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg www.DataSheet4U.com Preli...
Datasheet	IXFH58N20Q PDF File

Overview

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg www.
DataSheet4U.
com Preliminary data sheet IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS(on) = 200 V = 58 A = 40 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 58 232 58 30 1.
0 5 300 -55 .
.
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+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C g g TO-268 (D3) (IXFT) Case Style...

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