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D2425

NEC
Part Number D2425
Manufacturer NEC
Description 2SD2425
Published Apr 14, 2008
Detailed Description DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEE...
Datasheet PDF File D2425 PDF File

D2425
D2425

Overview
DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension.
This transistor is ideal for DC/DC converters and motor drivers.
PACKAGE DRAWING (UNIT: mm) FEATURES • New package with dimensions in between those of small www.
DataSheet4U.
com signal and power signal package • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1578 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
Electrode connection 1.
Emitter 2.
Collector 3.
Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg 7.
5 cm × 0.
7 mm ceramic board mounted 2 Conditions Ratings 60 60 6.
0 5.
0 Unit V V V A A A W °C °C PW ≤ 10 ms, duty cycle ≤ 50 % 7.
0 1.
0 2.
0 150 −55 to +150 The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D16157EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2425 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) ton tstg tf Conditio...


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