SIPMOS Power Transistor - Infineon Technologies
Description
SPP30N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 30
V A
RDS(on) 0.
018 Ω
• Avalanche rated • Logic Level • dv/dt rated
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• 175°C operating temperature
Type SPP30N03L SPB30N03L
Package
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
P-TO220-3-1 Q67040-S4737-A2 Tube P-TO263-3-2 Q67040-S4143-A3 Tape and Reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 28 120 145 7.
5 6 kV/µs mJ Unit A
ID
TC = 25 °C, 1) TC = 100 °C
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 °C
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C
Gate source voltage Power dissipation
VGS Ptot T j , Tstg
±14 75 -55.
.
.
+175 55/175/56
V W °C
TC = 25 °C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
1
Semiconductor Group
SPP30N03L
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min.
footprint
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Symbol min.
Values typ.
max.
2 62 62 40
Unit
RthJC RthJA RthJA
-
K/W
@ 6 cm 2 cooling area2)
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min.
Values typ.
1.
6 max.
2 µA 10 100 100 nA Ω 0.
023 0.
013 0.
028 0.
018 V Unit
V(BR)DSS VGS(th) I DSS
30 1.
2
VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C
Gate threshold voltage, VGS = VDS ID = 50 µA Zero gate voltage drain current
VDS = 30 V, VGS = 0 V, T j = 25 °C VDS = 30 V, VGS = 0 V, T j = 150 °C
Gate-source leakage current
I GSS RDS(on)
-
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.
5 V, ID = 28 A VGS = 10 V, ID = 28 A
1current limited by ...
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