Silicon N-Channel MOSFET - Toshiba Semiconductor
Description
SSM3K16FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FV
High Speed Switching Applications Analog Switch Applications
• Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 3.
0 Ω (max) (@VGS = 4 V)
: Ron = 4.
0 Ω (max) (@VGS = 2.
5 V) : Ron = 15 Ω (max) (@VGS = 1.
5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage Drain current
DC Pulse
VGSS ID IDP
±10
V
100 mA
200
Drain power dissipation (Ta = 25°C) PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
0.
22±0.
05
1.
2±0.
05 0.
8±0.
05
nit: mm
0.
32±0.
05
1 3
2
1.
2±0.
05 0.
8±0.
05 0.
4 0.
4
0.
13±0.
05
0.
5±0.
05
VESM
1.
Gate 2.
Source 3.
Drain
Note:
Using continuously under heavy loads (e.
g.
the application of
JEDEC
-
high temperature/current/voltage and the significant change in
temperature, etc.
) may cause this product to decrease in the
JEITA
-
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the
TOSHIBA
2-1L1B
absolute maximum ratings.
Weight: 0.
0015 g (typ.
)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.
4 mm × 25.
4 mm × 1.
6 t)
0.
5mm 0.
45mm 0.
45mm
0.
4mm
Marking
3
Equivalent Circuit
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2003-04
1
2014-03-01
Ele...
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