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UTC 9014
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015
1
TO-92
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Pc Tj TSTG
RATING
50 45 5 100 450 150 -55 ~ +150
UNIT
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Output Capacitance Current gain-Bandwidth Porduct Noise Figure
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Cob fT NF
TEST CONDITIONS
Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, Ic=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V,Ic=1mA Ic=100mA, IB=5mA Ic=100mA, IB=5mA VCE=5V, Ic=2mA VCB=10V, IE=0, f=1MHz VCE=5V, Ic=10mA VCE=5V, Ic=0. 2mA f=1KHz, Rs=2KΩ
MIN
50 45 5
TYP
MAX
UNIT
V V V nA nA V V V pF MHz dB
60
0. 58 150
280 0. 14 0. 84 0. 63 2. 2 270 0. 9
50 100 1000 0. 3 1. 0 0. 7 3. 5 10
UTC
UNISONIC TECHNOLOGIES CO. , LTD.
1
QW-R201-031,A
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UTC 9014
CLASSIFICATION OF hFE
RANK RANGE A 60-150
NPN EPITAXIAL SILICON TRANSISTOR
B 100-300 C 200-600 D 400-1000
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfun...
9014C PDF File
