SILICON PLANAR TYPE THYRISTOR - Toshiba Semiconductor
Description
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SF10G41A,SF10J41A
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF10G41A,SF10J41A
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Gate Trigger Current : IT (AV) = 10A : IGT = 15mA (Max.
) Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, Tj = 0~125°C) SF10G41A SF10J41A SF10G41A VRSM SF10J41A IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg
2
SYMBOL VDRM VRRM
RATING 400
UNIT
V 600 500 V 720 10 16 160 (50Hz) 176 (60Hz) 125 100 5 0.
5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C
2
Average On−State Current (Half Sine Waveform Tc = 79°C) R.
M.
S On−State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Curret Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range
2
JEDEC JEITA TOSHIBA Weight: 2g
TO−220AB SC−46 13−10G1B
1
2001-07-10
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SF10G41A,SF10J41A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv / dt IH IL Rth (j−c) TEST CONDITION VDRM = VRRM = Rated ITM = 30A VD = 6V, RL = 10Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated × 2 / 3, Tc = 125°C Exponential Rise VD = 6V, ITM = 1A VD = 6V, f = 50Hz, tgw = 50µS, iG = 30mA Junction to Case MIN ― ― ― ― 0.
2 100 ― ― ― MAX 10 1.
6 1.
0 15 ― ― 40 60 2.
0 UNIT µA V V mA V V / µs mA mA °C / W
MARKING
NUMBER *1 *2 SYMBOL SF10G41A TYPE SF10J41A SF10G41A, ...
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