N-Channel MOSFET - Fairchild Semiconductor
Description
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MTD3055VL
August 1999 DISTRIBUTION GROUP*
MTD3055VL
General Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
12 A, 60 V.
RDS(ON) = 0.
18 Ω @ VGS = 5 V Critical DC electrical parameters specified at elevated temperature.
Low drive requirements allowing operation directly from logic drivers.
Vgs(th) < 2 V.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
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