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K2608

Part Number	K2608
Manufacturer	Toshiba Semiconductor
Description	2SK2608
Published	Jan 19, 2008
Detailed Description	2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications ...
Datasheet	K2608 PDF File

Overview

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 3.
73 Ω (typ.
) z High forward transfer admittance : |Yfs|= 2.
6 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Ch...

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